參數(shù)資料
型號(hào): 71V3577YS75PF8
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類(lèi): SRAM
英文描述: 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
封裝: 14 X 20 MM, PLASTIC, TQFP-100
文件頁(yè)數(shù): 3/22頁(yè)
文件大?。?/td> 621K
代理商: 71V3577YS75PF8
6.42
11
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Linear Burst Sequence Table ( LBO=VSS)
Synchronous Write Function Truth Table (1, 2)
Asynchronous Truth Table (1)
Interleaved Burst Sequence Table ( LBO=VDD)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
BW3 and BW4 are not applicable for the IDT71V3579.
3. Multiple bytes may be selected during the same cycle.
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Operation
GW
BWE
BW1
BW2
BW3
BW4
Read
H
XXXX
Read
H
L
HHHH
Write all Bytes
L
XXXXX
Write all Bytes
H
LLLLL
Write Byte 1(3)
H
L
HHH
Write Byte 2(3)
HL
H
Write Byte 3(3)
HL
H
L
H
Write Byte 4(3)
H
L
HHH
L
6450 tbl 12
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
Data Out
Active
Read
H
L
High-Z
Active
Write
X
L
High-Z – Data In
Active
Deselected
X
L
High-Z
Standby
Sleep Mode
X
H
High-Z
Sleep
6450 tbl 13
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
000
11
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
111
0
1
00
6450 tbl 14
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
000
11
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
11
000
1
0
6450 tbl 15
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