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參數(shù)資料
| 型號： | 71V3577YS75PF8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 22/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | 71V3577YS75PF8 |
6.42
9
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Figure 2. Lumped Capacitive Load, Typical Derating
Figure 1. AC Test Load
AC Test Load
AC Test Conditions
(VDDQ = 3.3V)
NOTE:
1. The
LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and the ZZ in will be internally pulled to VSS if they are not actively driven in the application.
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while
ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
VDDQ/2
50
I/O
Z0 =50
6450 drw 03
,
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to VDD
___
5 A
|ILI|
ZZ ,
LBO and JTAG Input Leakage Current(1)
VDD = Max., VIN = 0V to VDD
___
30
A
|ILO|
Output Leakage Current
VOUT = 0V to VDDQ, Device Deselected
___
5 A
VOL
Output Low Voltage
IOL = +8mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = -8mA, VDD = Min.
2.4
___
V
6450 tbl 08
Symbol
Parameter
Test Conditions
6.5ns
7.5ns
8ns
8.5ns
Unit
Com'l Only
Com'l
Ind
Com'l
Ind
IDD
Operating Power Supply Current
Device Selected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VIH or < VIL, f = fMAX(2)
300
255
200
210
180
190
mA
ISB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
30
35
30
35
mA
ISB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = fMAX (2,.3)
110
90
85958090
mA
IZZ
Full Sleep Mode Supply Current
ZZ > VHD, VDD = Max.
30
35
30
35
mA
6450 tbl 09
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
0 to 3V
2ns
1.5V
See Figure 1
6450 tbl 10
1
2
3
4
20 30 50
100
200
tCD
(Typical, ns)
Capacitance (pF)
80
5
6
6450 drw 05
,
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| 71V3577YS85PFG | 功能描述:IC SRAM 4.5MBIT 8.5NS 100TQFP 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):過期 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（128K x 36） 速度:8.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-TQFP（14x20） 標(biāo)準(zhǔn)包裝:72 |
| 71V3578S133PF | 制造商:Integrated Device Technology Inc 功能描述:SRAM CHIP SYNC SINGLE 3.3V 4.5M-BIT 256K X 18 4.2NS - Trays 制造商:Integrated Device Technology Inc 功能描述:IDT 71V3578S133PF, SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 4.2ns 100-Pin TQFP |
| 71V3578S133PFG | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3578S133PFG8 | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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