參數(shù)資料
型號： 71T016SA20BFGI
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 64K X 16 STANDARD SRAM, 20 ns, PBGA48
封裝： 7 X 7 MM, PLASTIC, FBGA-48
文件頁數(shù)： 3/9頁
文件大小： 477K
代理商： 71T016SA20BFGI
6.42
3
IDT71T016SA, 2.5V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
Rating
Value
Unit
Parameter
71T016SA10
71T016SA12
71T016SA15
71T016SA20
Symbol
Com'l
Com'l
Ind
Com'l
Ind
Coml
Ind
Unit
I
CC
Dynamc Operating Current
CS
< V
LC
,
Outputs Open, V
DD
= Max., f = f
MAX
(3)
Max.
160
150
160
130
130
120
120
mA
Typ.
(4)
90
85
____
80
____
80
____
I
SB
Dynamc Standby Power Supply Current
CS
>
V
HC
,
Outputs Open, V
DD
= Max., f = f
MAX
(3)
45
40
45
35
35
30
30
mA
I
SB
1
Full Standby Power Supply Current (static)
CS
>
V
HC
,
Outputs Open, V
DD
= Max., f = 0
(3)
10
15
15
15
15
15
15
mA
5326 tbl 8
Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics
(V
DD
= Mn. to Max., Commercial and Industrial Temperature Ranges)
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions
DC Electrical Characteristics
(1,2)
(V
DD
= Mn. to Max., V
LC
= 0.2V, V
HC
= V
DD
– 0.2V)
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximumrating
conditions for extended periods may affect reliability.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. All values are maximumguaranteed values.
2. All inputs switch between 0.2V (Low) and V
DD
– 0.2V (High).
3. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing
.
4. Typical values are measured at 2.5V, 25°C and with equal read and write cycles. This parameter is guaranteed by device characterization but is not production
tested.
V
DD
Supply Voltage Relative
to V
SS
–0.3 to +3.6
V
V
IN
, V
OUT
Termnal Voltage Relative
to V
SS
–0.3 to V
DD
+0.3
V
T
BIAS
Temperature Under Bias
–55 to +125
o
C
T
STG
Storage Temperature
–55 to +125
o
C
P
T
Power Dissipation
1.25
W
I
OUT
DC Output Current
50
mA
5326 tbl 03
Grade
Temperature
V
SS
V
DD
Commercial
0°C to +70°C
0V
See Below
Industrial
-40°C to +85°C
0V
See Below
5326 tbl 04
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Supply Voltage
2.375
2.5
2.625
V
Vss
Ground
0
0
0
V
V
IH
Input High Voltage
1.7
____
V
DD
+0.3
(1)
V
V
IL
Input Low Voltage
–0.3
(2)
____
0.7
V
5326 tbl 05
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
6
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
5326 tbl 06
Symbol
Parameter
Test Condition
IDT71T016SA
Unit
Min.
Max.
|
LI
|
Input Leakage Current
V
DD
= Max., V
IN
= V
SS
to V
DD
___
5
μA
|
LO
|
Output Leakage Current
V
DD
= Max.,
CS
= V
IH
, V
OUT
= V
SS
to V
DD
___
5
μA
V
OL
Output LowVoltage
I
OL
= 2.0mA, V
DD
= Min.
___
0.7
V
V
OH
Output High Voltage
I
OH
= 2.0mA, V
DD
= Mn.
1.7
___
V
5326 tbl 07
NOTES:
1. V
IH
(max) = V
DD
+ 1.0V a.c. (pulse width less than t
CYC
/2) for I < 20 mA, once
per cycle.
2. V
IL
(mn) = -1.0V a.c. (pulse width less than t
CYC
/2) for I < 20 mA, once per cycle.
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