- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298476 > 70P249L65BYGI (INTEGRATED DEVICE TECHNOLOGY INC) 4K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 PDF資料下載
參數(shù)資料
| 型號： | 70P249L65BYGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 4K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 |
| 封裝： | 0.50 MM PITCH, GREEN, BGA-100 |
| 文件頁數(shù)： | 12/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 70P249L65BYGI |
6.42
IDT70P269/259/249L
Low Power 16K/8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
2
OCTOBER 16, 2008
Description
The IDT70P269/259/249 is a very low power 16K/8K/4K x 16 Dual-
Port Static RAM. The IDT70P269/259/249 is designed to be used as a
stand-alone 256/128/64K-bit Dual-Port SRAM.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by
CSpermitstheon-chipcircuitryofeachporttoenter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 27mW of power.
The IDT70P269/259/249 is packaged in a 100 ball 0.5mm- pitch Ball
Grid Array. The package is a 1mm thick and designed to fit in wireless
handsetapplications.
Pin Configurations(2,3)
A
B
C
D
E
F
G
H
J
K
1234
5
6789
10
A
B
C
D
E
F
G
H
J
K
1234
5
6789
10
A5R
A8R
A11R
UBR
VSS
ADVR
I/O15R
I/O12R
I/O10R
VSS
I/O6R
I/O9R
VDDIOR
OER
WER
CSR
A9R
A7R
A4R
A3R
A0R
A1R
A2R
A6R
LBR
IRR1
(1)
I/O14R
I/O11R
I/O7R
VSS
I/O2R
I/O5R
I/O8R
I/O13R
A12R
(3)
A10R
INTR
BUSYR
ODR2
ODR4
VSS
DNU
ODR3
INTL
VSS
I/O4R
VDDIOR
I/O1R
VSS
VDDIOL
I/O15L
I/O0R
I/O3R
VSS
VDD
A1L
BUSYL
ODR1
SFEN
ODR0
A0L
A2L
A5L
A12L
(3)
A4L
A9L
A3L
A7L
A10L
6L
A8L
A11L
LBL
IRR0
(2)
UBL
ADVL
WEL
VSS
VDD
CSL
OEL
I/O3L
I/O1L
VDDIOL MSELR
I/O14L
I/O13L
I/O12L
I/O11L
I/O10L
I/O9L
I/O7L
I/O5L
I/O8L
I/O6L
I/O4L
I/O0L
I/O2L
MSELL
7146 drw 02
70P269/259/249BY
BYG-100
100-Ball 0.5mm Pitch BGA
Top View
NOTES:-
1. This pin is A13R for IDT70P269.
2. This pin is A13L for IDT70P269.
3. This pin is DNU for IDT70P249.
4. DNU pins are "do not use". No trace or power component can be connected to these pins.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 70R89-P | 20 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK |
| 70R89-59 | 20 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK |
| 70R89-58 | 20 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK |
| 70R89-50 | 20 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK |
| 70R89-49 | 20 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 70P249L65BYGI8 | 功能描述:靜態(tài)隨機存取存儲器 Low Power Dual-Port RAM IC RoHS:否 制造商:IDT 存儲容量: 組織: 訪問時間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風格: 封裝 / 箱體: 封裝: |
| 70P249L90BYGI | 功能描述:IC SRAM 64KBIT 90NS 100FBGA 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):過期 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:64K（4K x 16） 速度:90ns 接口:并聯(lián) 電壓 - 電源:1.7 V ~ 1.9 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:100-TFBGA 供應(yīng)商器件封裝:100-CABGA（6x6） 標準包裝:90 |
| 70P249L90BYGI8 | 功能描述:靜態(tài)隨機存取存儲器 Low Power Dual-Port RAM IC RoHS:否 制造商:IDT 存儲容量: 組織: 訪問時間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風格: 封裝 / 箱體: 封裝: |
| 70P24L20BF | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 1.8V 64KBIT 4K X 16 20NS 100BGA - Bulk |
| 70P24L20BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 1.8V 64KBIT 4K X 16 20NS 100BGA - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。