參數(shù)資料
型號: 6AM13
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel/P-Channel Complementary Power MOS FET Array
中文描述: 硅N-Channel/P-Channel互補功率場效應(yīng)晶體管陣列
文件頁數(shù): 4/12頁
文件大?。?/td> 65K
代理商: 6AM13
6AM13
4
6
5
4
3
2
1
0
25
50
75
100
125
150
Ambient Temperature Ta (°C)
C
6 Device Operation
Condition : Channel dissipation of
each die is identical
4 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
60
40
20
0
25
50
75
100
125
150
Case Temperature Tc (°C)
C
Condition : Channel dissipation of
each die is identical
6 Device Operation
4 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
– 50
– 30
– 10
– 3
– 1
– 0.3
– 0.1
– 0.05
– 0.1
– 0.3
– 1
– 3
– 10
– 30
– 100
Drain to Source Voltage V (V)
D
D
1m
PW=10m 1sho)
DCOpeaion(Tc=25C
Ta = 25°C
Operation in this area
is limited by R (on)
μ
μ
100 s
Maximum Safe Operation Area
(P-Channel)
–50
–8
–20
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–40
–10
–4
–12
–16
0
–20
–30
D
D
Pulse Test
–5 V
–4 V
V
GS
= –3 V
–8 V
–6 V
–10 V
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6AM14 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel/P-Channel Power MOS FET Array
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