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參數(shù)資料
| 型號： | 6AM13 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Complementary Power MOS FET Array |
| 中文描述： | 硅N-Channel/P-Channel互補(bǔ)功率場效應(yīng)晶體管陣列 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 6AM13 |
6AM13
3
Electrical Characteristics
(Ta = 25°C) (1 Unit)
N channel
P channel
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
V
(BR)DSS
60
—
—
–60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source
breakdown voltage
V
(BR)GSS
±20
—
—
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak
current
I
GSS
—
—
±10
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
Zero gate voltage drain
current
I
DSS
—
—
250
—
—
–250
μA
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff
voltage
V
GS(off)
1.0
—
2.0
–1.0
—
–2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source
R
DS(on)
—
0.06
0.075 —
0.09
0.12
I
D
= 5 A, V
GS
= 10 V*
1
I
D
= 5 A, V
GS
= 4 V*
1
I
D
= 5 A, V
DS
= 10 V*
1
on state resistance
—
0.08
0.11
—
0.12
0.18
Forward transfer
admittance
|y
fs
|
6
9.5
—
5
8
—
S
Input capacitance
Ciss
—
860
—
—
1400 —
pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Output capacitance
Coss
—
450
—
—
720
—
pF
Reverse transfer
capacitance
Crss
—
140
—
—
220
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
—
15
—
ns
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Rise time
—
50
—
—
100
—
ns
Turn-off delay time
—
180
—
—
250
—
ns
Fall time
—
110
—
—
160
—
ns
Body to drain diode
forward voltage
—
1.0
—
—
–1.0
—
V
I
F
= 10 A, V
GS
= 0
Body to drain diode
reverse recovery time
Note:
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
t
rr
—
120
—
—
200
—
ns
I
= 10 A, V
= 0,
diF/dt = 50 A/μs
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