參數(shù)資料
型號(hào)： 2SJ624
廠商： NEC Corp.
英文描述： Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA
中文描述： MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 71K
代理商： 2SJ624
Data Sheet D15890EJ1V0DS
5
2SJ624
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0
-0.01
20
40
60
80
100
-0.1
-1
-10
-100
V
GS
=
4.5 V
Pulsed
25°C
25°C
75°C
T
A
= 125°C
I
D
- Drain Current - A
R
D
20
40
60
80
100
120
-0.01
-0.1
-1
-10
-100
V
GS
=
2.5 V
Pulsed
25°C
25°C
75°C
T
A
= 125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
R
D
40
60
80
100
120
-0.01
-0.1
-1
-10
-100
V
GS
=
1.8 V
Pulsed
25°C
25°C
75°C
T
A
= 125°C
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
10
100
1000
-0.1
-1
-10
V
DD
=
10 V
V
GS
=
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
C
i
,
o
,
r
10
100
1000
10000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
I
F
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
Pulsed
V
GS
= 0 V
V
F(S-D)
- Source to Drain Voltage - V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ624(T1B-A) 制造商:Renesas Electronics Corporation 功能描述:
2SJ624-T1B-A 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape
2SJ625 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ625-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ625-T1B-A/XM 制造商:Renesas Electronics Corporation 功能描述:
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