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參數(shù)資料
| 型號(hào)： | 2SJ624 |
| 廠商： | NEC Corp. |
| 英文描述： | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2SJ624 |
Data Sheet D15890EJ1V0DS
3
2SJ624
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.25
0.5
0.75
1
1.25
1.5
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
4.5 V)
5 s
Single Pulse
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
10
100
1000
Single Pulse
Without board
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ625 | T-NPN-SI HIGH CURRENT AMP |
| 2SJ626 | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V |
| 2SJ633 | 2SJ633 |
| 2SJ634 | DC/ DC CONVERTER TRANSISTOR |
| 2SJ637 | DC/DC FOR CONVERTER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ624(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ624-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
| 2SJ625 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ625-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ625-T1B-A/XM | 制造商:Renesas Electronics Corporation 功能描述: |
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