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參數(shù)資料
| 型號(hào)： | 2SJ624 |
| 廠商： | NEC Corp. |
| 英文描述： | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 71K |
| 代理商： | 2SJ624 |
Data Sheet D15890EJ1V0DS
2
2SJ624
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –20 V, V
GS
= 0 V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
8.0 V, V
DS
= 0 V
m
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1.0 mA
–0.45
–0.75
–1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10 V, I
D
= –2.5 A
5.0
9.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –4.5 V, I
D
= –2.5 A
43
54
m
R
DS(on)2
V
GS
= –2.5 V, I
D
= –2.5 A
53
71
m
R
DS(on)3
V
GS
= –1.8 V, I
D
= –1.5 A
65
108
m
Input Capacitance
C
iss
V
DS
= –10 V
813
pF
Output Capacitance
C
oss
V
GS
= 0 V
165
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
69
pF
Turn-on Delay Time
t
d(on)
V
DD
= –10 V, I
D
= –2.5 A
14
ns
Rise Time
t
r
V
GS
= –4.0 V
42
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
80
ns
Fall Time
t
f
92
ns
Total Gate Charge
Q
G
V
DD
= –16 V
8.1
nC
Gate to Source Charge
Q
GS
V
GS
= –4.0 V
1.3
nC
Gate to Drain Charge
Q
GD
I
D
= –4.5 A
2.8
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 4.5 A, V
GS
= 0 V
0.90
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS (
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
GS
Wave Form
V
DS
Wave Form
V
GS (
)
V
DS (
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ624(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SJ625 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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