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參數(shù)資料
| 型號(hào)： | 2SJ626 |
| 廠商： | NEC Corp. |
| 英文描述： | Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | 2SJ626 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D15962EJ1V0DS00 (1st edition)
June 2002 NS CP(K)
2002
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly
by a 4.0 V power source.
The 2SJ626 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 388 m
MAX. (V
GS
= –10 V, I
D
= –1.0 A)
R
DS(on)2
= 514 m
MAX. (V
GS
= –4.5 V, I
D
= –1.0 A)
R
DS(on)3
= 556 m
MAX. (V
GS
= –4.0 V, I
D
= –1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ626
SC-96 (Mini Mold Thin Type)
Marking: XN
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–60
V
V
A
A
W
W
°C
°C
m
20
m
1.5
m
6.0
0.2
1.25
150
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.4
+0.1
2
1
0.95
1
2
3
1.9
2.9 ±0.2
0.95
0
+
–
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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PDF描述 |
|---|---|
| 2SJ633 | 2SJ633 |
| 2SJ634 | DC/ DC CONVERTER TRANSISTOR |
| 2SJ637 | DC/DC FOR CONVERTER |
| 2SJ643 | P CHANNEL MOS SILICON TRANSISTOR |
| 2SJ645 | P CHANNEL MOS SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ626-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ626-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R |
| 2SJ628 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ629 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ630 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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