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參數(shù)資料
| 型號(hào)： | 2SJ606-Z |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 78K |
| 代理商： | 2SJ606-Z |
Data Sheet D14654EJ3V0DS
2
2SJ606
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
60 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1 mA
m
10
2.5
μ
A
Gate Cut-off Voltage
V
GS(off)
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
42 A
38
74
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
10 V, I
D
=
42 A
12
15
m
R
DS(on)2
V
GS
=
4.0 V, I
D
=
42 A
16
23
m
Input Capacitance
C
iss
V
DS
=
10 V
4800
pF
Output Capacitance
C
oss
V
GS
= 0 V
1200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
340
pF
Turn-on Delay Time
t
d(on)
V
DD
=
30 V, I
D
=
42 A
13
ns
Rise Time
t
r
V
GS
=
10 V
13
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
290
ns
Fall Time
t
f
160
ns
Total Gate Charge
Q
G
V
DD
=
48 V
120
nC
Gate to Source Charge
Q
GS
V
GS
=
10 V
20
nC
Gate to Drain Charge
Q
GD
I
D
=
83 A
30
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 83 A, V
GS
= 0 V
1.1
V
Reverse Recovery Time
t
rr
I
F
= 83 A, V
GS
= 0 V
60
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
120
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
=
20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
)
10%
90%
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
V
GS
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ606-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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| 2SJ607 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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| 2SJ607-S | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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