參數(shù)資料
型號: 2SJ607-Z
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 1/8頁
文件大?。?/td> 78K
代理商: 2SJ607-Z
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MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D14655EJ3V0DS00 (3rd edition)
July 2002 NS CP(K)
The mark
#
shows major revised points.
2000, 2001
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 11 m
MAX. (V
GS
=
10 V, I
D
=
42 A)
R
DS(on)2
= 16 m
MAX. (V
GS
=
4.0 V, I
D
=
42 A)
Low input capacitance:
C
iss
= 7500 pF TYP. (V
DS
=
10
V, V
GS
= 0
V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
m
20
m
83
m
332
160
1.5
150
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
55 to +150
50
250
Notes 1.
PW
10
μ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
=
30 V, R
G
= 25
, V
GS
=
20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ607
TO-220AB
2SJ607-S
TO-262
2SJ607-ZJ
TO-263
2SJ607-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only in
Japan
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
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