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參數(shù)資料
| 型號(hào)： | 2SJ606-ZJ |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 2SJ606-ZJ |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ606
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D14654EJ3V0DS00 (3rd edition)
July 2002 NS CP(K)
The mark
#
shows major revised points.
2000, 2001
DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 15 m
MAX. (V
GS
=
10 V, I
D
=
42 A)
R
DS(on)2
= 23 m
MAX. (V
GS
=
4.0 V, I
D
=
42 A)
Low input capacitance:
C
iss
= 4800 pF TYP. (V
DS
=
10
V, V
GS
= 0
V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
m
20
m
83
m
300
120
1.5
150
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
55 to +150
40
160
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
30 V, R
G
= 25
, V
GS
=
20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ606
TO-220AB
2SJ606-S
TO-262
2SJ606-ZJ
TO-263
2SJ606-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only in
Japan
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相關(guān)PDF資料 |
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|---|---|
| 2SJ607 | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-S | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-Z | MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-ZJ | MOS FIELD EFFECT TRANSISTOR |
| 2SJ609 | DC / DC Converter Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ607 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SJ607-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,9.1m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Isolated |
| 2SJ607-S | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220SMD Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(2+Tab) TO-263 |
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