參數(shù)資料
型號: 2SJ598-Z
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET
中文描述: 開關(guān)P溝道功率MOS FET
文件頁數(shù): 7/8頁
文件大?。?/td> 154K
代理商: 2SJ598-Z
Data Sheet D14656EJ4V0DS
7
2SJ598
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
1
3
6.5 ±0.2
5.0 ±0.2
4
1
0
+
5
7
1
2.3
2.3
0
0.5 ±0.1
2.3 ±0.2
1
1.1 ±0.2
0.5
+0.2
0.5
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.5 ±0.2
5.0 ±0.2
4
0
2.3 2.3
0.9
MAX.
5
1
2
M
1
0
+
2.3 ±0.2
0.5 ±0.1
0.8
MAX.
0.8
1
1
0
1.1 ±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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