參數(shù)資料
型號: 2SJ599-Z
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)P溝道功率MOS FET工業(yè)用
文件頁數(shù): 1/4頁
文件大?。?/td> 40K
代理商: 2SJ599-Z
2000
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
Date Published
Printed in Japan
D14644EJ1V0DS00 (1st edition)
November 2000 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
R
DS(on)1
= 75 m
MAX. (V
GS
= –10
V, I
D
= –10
A)
R
DS(on)2
= 111 m
MAX. (V
GS
= –4.0
V, I
D
= –10 A)
Low C
iss
: C
iss
= 1300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0
V)
Gate to Source Voltage (V
DS
= 0
V)
V
DSS
V
GSS
–60
V
V
+
20
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
+
20
A
A
W
W
°C
°C
A
mJ
+
50
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
(T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
35
1.0
150
–55 to +150
–20
40
Notes 1.
PW
10
μ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, R
G
= 25
, V
GS
= –20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
(TO-251)
(TO-252)
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