參數(shù)資料
型號(hào)： 2SJ598-Z
廠商： NEC Corp.
英文描述： SWITCHING P-CHANNEL POWER MOS FET
中文描述： 開(kāi)關(guān)P溝道功率MOS FET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 154K
代理商： 2SJ598-Z
Data Sheet D14656EJ4V0DS
2
2SJ598
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –60
V, V
GS
= 0
V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
16
V, V
DS
= 0
V
m
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10
V, I
D
= –1
mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –6
A
5
11
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –10
V, I
D
= –6
A
102
130
m
R
DS(on)2
V
GS
= –4.0
V, I
D
= –6
A
131
190
m
Input Capacitance
C
iss
V
DS
= –10
V
720
pF
Output Capacitance
C
oss
V
GS
= 0
V
150
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
50
pF
Turn-on Delay Time
t
d(on)
I
D
= –6
A
7
ns
Rise Time
t
r
V
GS
= –10
V
4
ns
Turn-off Delay Time
t
d(off)
V
DD
= –30
V
35
ns
Fall Time
t
f
R
G
= 0
10
ns
Total Gate Charge
Q
G
I
D
= –12
A
15
nC
Gate to Source Charge
Q
GS
V
DD
= –48
V
3
nC
Gate to Drain Charge
Q
GD
V
GS
= –10
V
4
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 12
A, V
GS
= 0
V
0.98
V
Reverse Recovery Time
t
rr
I
F
= 12
A, V
GS
= 0
V
50
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
μ
s
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
L
V
DD
V
GS
=
20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
)
10%
90%
V
GS
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
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2SJ598-Z-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) TO-252
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2SJ599-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
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