參數(shù)資料
型號(hào): 2SJ353
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: 個(gè)P -溝道MOS場(chǎng)效應(yīng)管高高速開關(guān)
文件頁數(shù): 3/6頁
文件大小: 58K
代理商: 2SJ353
2SJ353
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD
BIAS SAFE OPERATING AREA
d
0
100
80
60
40
20
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
I
D
–1
–10
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
0
–5
–4
–3
–2
–1
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
–0.5
–10
–1
–0.1
–0.01
–0.001
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|
f
|
–0.001
10
1
0.1
0.01
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
–0.01
1.4
1.2
1
0.8
0.6
0.4
0.2
0
I
D
- Drain Current - A
30
60
90
120
150
–5
–2
–1
–0.5
–0.2
–0.1
–2
–5
–10
–20
–50
–100
Single pulse
PW=100ms
10ms
1ms
DC
–1
–2
–3
–4
–5
–0V
–45V
–4.0 V
–3.5 V
–3.0 V
–2.5 V
V
GS
= –2.0 V
–4
–1
–1.5
–2
–2.5
–3
–3.5
–25 C
25 C
T
A
= 75 C
V
DS
= 10 V
–1
–0.01
–0.1
V
DS
= –10 V
75 C
25 C
T
A
= –25 C
V
GS
= –4 V
–25 C
T
A
= 75 C
25 C
–0.1
–1
–10
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