參數(shù)資料
型號(hào): 2SJ353
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: 個(gè)P -溝道MOS場效應(yīng)管高高速開關(guān)
文件頁數(shù): 2/6頁
文件大小: 58K
代理商: 2SJ353
2SJ353
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= –60 V, V
GS
= 0
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= –16/+10 V, V
DS
= 0
±
10
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1 mA
–1.0
–1.6
–2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= –10 V, I
D
= –1.0 A
1.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= –4 V, I
D
= –0.8 A
0.58
0.68
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= –10 V, I
D
= –1.0 A
0.33
0.37
Input Capacitance
C
iss
V
DS
= –10 V, V
GS
= 0,
f = 1.0 MHz
320
pF
Output Capacitance
C
oss
200
pF
Reverse Transfer Capacitance
C
rss
70
pF
Turn-On Delay Time
t
d(on)
V
DD
= –30 V, I
D
= –1.0 A
V
GS(on)
= –10 V,
R
G
= 10
, R
L
= 30
5
ns
Rise Time
t
r
15
ns
Turn-Off Delay Time
t
d(off)
40
ns
Fall Time
t
f
20
ns
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