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參數(shù)資料
| 型號： | 2SJ353 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 中文描述： | 個(gè)P -溝道MOS場效應(yīng)管高高速開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2SJ353 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
0.8 ±0.1
3
0.6 ±0.1
0.6 ±0.1
0.6 ±0.1
1.7
1.7
GD S
1
4
0.55 ±0.1
1
9
2
1.2
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Gate
Source
Drain
The 2SJ353 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
Radial taping supported
Can be directly driven by output of 5-V IC
Low ON resistance
R
DS(on)
= 0.68
MAX. @V
GS
= –4 V, I
D
= –0.8 A
R
DS(on)
= 0.37
MAX. @V
GS
= –10 V, I
D
= –1.0 A
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
–60
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
20/+10
V
Drain Current (DC)
I
D(DC)
±
1.5
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms,
Duty cycle
≤
1 %
±
3.0
A
Total Power Dissipation
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
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| 2SJ355 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING |
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