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參數(shù)資料
| 型號(hào)： | 2SJ355 |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)管的高開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | 2SJ355 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ355
P-CHANNEL MOS FET
FOR HIGH SWITCHING
Document No. D11217EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42
±0.06
0
1.5
0.42
±0.06
0.47
±0.06
3.0
2
4
0.41
+0.03
1.5 ±0.1
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Gate
Source
Drain
Marking: PQ
The 2SJ355 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
Can be directly driven by 5-V IC
Low ON resistance
R
DS(on)
= 0.60
MAX. @V
GS
= –4 V, I
D
= –1.0 A
R
DS(on)
= 0.35
MAX. @V
GS
= –10 V, I
D
= –1.0 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
–30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
–20/+10
V
Drain Current (DC)
I
D(DC)
±
2.0
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms
Duty cycle
≤
1 %
±
4.0
A
Total Power Dissipation
P
T
16 cm
2
×
0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ356 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ357 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ361 | Silicon P-Channel MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ355-T1(AZ) | 制造商:Renesas Electronics 功能描述:Pch -30V }2A 0.35 SOT89 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ355-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ356 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ356-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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