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參數(shù)資料
| 型號： | 2SD2383 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING |
| 中文描述： | NPN硅外延晶體管高壓開關(guān) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SD2383 |
Data Sheet D16154EJ2V0DS
2
2SD2383
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 200 V, I
E
= 0 A
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0 A
100
nA
DC Current Gain
h
FE
V
CE
= 6.0 V, I
C
= 5 mA
100
250
Collector Saturation Voltage
V
CE(sat)
I
C
= 5.0 mA, I
B
= 0.5 mA
85
500
mV
Base Saturation Voltage
V
BE(sat)
I
C
= 5.0 mA, I
B
= 0.5 mA
0.68
1.0
V
Gain Bandwidth Product
f
T
V
CE
= 30 V, I
E
=
10 mA
90
MHz
Output Capacitance
C
ob
V
CB
= 30 V, I
E
= 0, f = 1 MHz
1.3
pF
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0
0
50
100
150
25
75
125
T
A
- Ambient Temperature - C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
Free air
100
50
20
10
5
2
1
0.1
0.5
0.2
600
800
1000
700
900
500
400
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
- Base to Emitter Voltage - mV
I
C
V
CE
= 6.0 V
T
A
7C
2C
2C
100
100
50
50
20
20
10
1000
500
200
10
5
2
1
0.1
0.5
0.2
I
C
- Collector Current - mA
h
F
V
CE
= 6.0 V
T
A
= 75C
25C
25C
100
100
50
50
20
20
10
1000
500
200
10
5
2
1
0.1
0.5
0.2
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
V
C
I
C
= 10
.
I
B
T
A
= 75C
25C
25C
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