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參數(shù)資料
| 型號(hào)： | 2SD2390 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose) |
| 中文描述： | 10 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | 2SD2390 |
149
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1560)
Application :
Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2390
160
150
5
10
1
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SD2390
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
55
typ
95
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=7mA
I
C
=7A, I
B
=7mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Darlington
2S D2390
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
0
2
4
6
10
8
2
4
6
Collector-Emitter Voltage V
CE
(V)
C
C
(
1
25mA
2mA
1.5mA
1.2mA
0.8mA
1mA
0.6mA
I
B
=0.4mA
02
0.5
1
5
10
Collector Current I
C
(A)
D
F
(V
CE
=4V)
1000
5000
10000
40000
Typ
0.1
1
3
0.5
1
10
100
1000
5
50
500
2000
Time t(ms)
T
θ
j
(
0
10
8
2
4
6
0
2
2.5
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCsTm
2Ca m
–Cee)
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10ms
100ms
10
50
5
3
100
200
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I
B
(mA)
C
C
(
I
C
=5A
I
C
=7A
I
C
=10A
(V
CE
=4V)
0.2
0.5
5
10
1
Collector Current I
C
(A)
D
F
1000
500
5000
10000
50000
125C
25C
–30C
0
–0.1
–1
–10
20
40
100
80
60
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
10
7
R
L
(
)
I
C
(A)
V
(V)
–5
I
(mA)
–7
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
10.0typ
t
f
(
μ
s)
1.1typ
I
(mA)
7
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(70
)
Equivalent circuit
h
FE
Rank
O(5000to12000), P(6500to20000), Y(15000to30000)
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