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參數(shù)資料
| 型號(hào)： | 2SD2383 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING |
| 中文描述： | NPN硅外延晶體管高壓開關(guān) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 114K |
| 代理商： | 2SD2383 |
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confirm that this is the latest version.
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SILICON TRANSISTOR
2SD2383
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE SWITCHING
DATA SHEET
Document No. D16154EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The 2SD2383 is an element realizing high voltage in small
dimension. This transistor is ideal for downsizing sets
requiring high voltage.
FEATURES
High voltage
Small dimension
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SD2383
SC-59
Marking: N1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
400
V
Collector to Emitter Voltage
V
CEO
300
V
Emitter to Base Voltage
V
EBO
5.0
V
Collector Current (DC)
I
C(DC)
20
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
55 to +150
°C
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
0
+
–
0
0
2
0
+
–
0
1
Marking
0
+
–
0
1
2
3
1. Emitter
2. Base
3. Collector
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