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參數(shù)資料
| 型號： | 2SD2389 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose) |
| 中文描述： | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | 2SD2389 |
148
Darlington
2S D2389
I
C
–V
CE
Characteristics
(Typical)
25mA
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
0
2
4
6
8
2
4
6
Collector-Emitter Voltage V
CE
(V)
C
C
(
1A
20mA
1.5mA
1.3mA
1.0mA
0.8mA
0.5mA
I
B
=0.3mA
02
0.5
1
5
8
Collector Current I
C
(A)
D
F
(V
CE
=4V)
1000
5000
10000
40000
Typ
0
8
6
4
2
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2CaTp
–CaTp
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
3
100
200
150
0.05
0.03
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
10ms
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I
B
(mA)
C
C
(
I
C
=4A
I
C
=6A
I
C
=8A
(V
CE
=4V)
0.2
0.5
5
8
1
Collector Current I
C
(A)
D
F
1000
500
5000
10000
50000
125C
25C
–30C
0
–0.1
–1
–8
20
40
120
100
80
60
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
0.2
0.5
4
1
1
10
50
5
100
500 1000 2000
Time t(ms)
T
θ
j
(
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1559)
Application :
Audio, Series Regulator and General Purpose
External Dimensions
MT-100(TO3P)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2389
160
150
5
8
1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2389
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
80
typ
85
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=6A
I
C
=6A, I
B
=6mA
I
C
=6A, I
B
=6mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(
)
10
I
C
(A)
6
V
(V)
–5
I
(mA)
–6
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
10.0typ
t
f
(
μ
s)
0.9typ
I
(mA)
6
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(70
)
Equivalent circuit
h
FE
Rank
O(5000to12000), P(6500to20000), Y(15000to30000)
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| 2SD2389LD/OPY/ | 制造商:JVC Worldwide 功能描述:SI.TRANSISTOR |
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