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參數(shù)資料
| 型號(hào)： | 2SC5890 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon NPN Epitaxial UHF / VHF wide band amplifier |
| 中文描述： | npn型硅外延超高頻/甚高頻寬帶放大器 |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | 2SC5890 |
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2SC5890
Rev.0, Aug. 2002, page 2 of 14
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
Pc
20
V
Collector to emitter voltage
12
V
Emitter to base voltage
1.5
V
Collector current
75
mA
Collector power dissipation
700*
mW
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–
55 to +150
°
C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
—
—
1
μ
A
mA
μ
A
V
CB
= 12 V, I
E
= 0
V
CE
= 9 V, R
BE
=
∞
V
EB
= 1.5 V, I
C
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
= 5 V, I
C
= 30 mA,
f = 1 GHz
Collector cutoff current
—
—
1
Emitter cutoff current
—
—
10
DC current transfer ratio
100
150
200
V
Collector output capacitance
—
0.9
1.5
pF
Reverse transfer capacitance
Cre
—
0.85
—
pF
Gain bandwidth product
f
T
5.5
7.8
—
GHz
Forward transfer coefficient
S21
2
—
11
—
dB
V
= 5 V, I
C
= 30 mA,
f = 1 GHz
Power gain
PG
9.5
12
—
dB
V
= 5 V, I
= 30 mA,
f = 900 MHz
Noise figure
NF
—
1.0
1.9
dB
V
= 5 V, I
= 5 mA,
f = 900 MHz
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