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參數(shù)資料
| 型號(hào)： | 2SC5896 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220D-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 61K |
| 代理商： | 2SC5896 |
Power Transistors
2SC5896
Silicon NPN epitaxial planar type
1
Publication date: November 2002
SJD00300AED
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■
Features
High-speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
CBO
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
CE
=
4 V, I
C
=
0.2 A
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
60
V
Collector-base cutoff current (Emitter open)
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE1
h
FE2
60
80
250
h
FE3
30
Collector-emitter saturation voltage
V
CE(sat)
f
T
0.6
V
Transition frequency
100
MHz
Turn-on time
t
on
0.2
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
0.75
Fall time
0.15
Internal Connection
B
C
E
Marking Symbol: C5896
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
60
V
Emitter-base voltage (Collector open)
6
V
Collector current
I
C
3
A
Peak collector current
I
CP
P
C
5
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
15
W
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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