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參數(shù)資料
| 型號： | 2SC5890 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon NPN Epitaxial UHF / VHF wide band amplifier |
| 中文描述： | npn型硅外延超高頻/甚高頻寬帶放大器 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2SC5890 |
2SC5890
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
ADE-208-1533 (Z)
1st. Edition
Aug.2002
Features
High gain bandwidth product:
f
T
= 7.8 GHz typ.
High power gain and low noise figure;
PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz
High collector power dissipation:
Pc = 700 mW
when using alumina ceramic board
(25 x 60 x 0.7 mm)
High withstanding to ESD of collector to emitter:
Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition.
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
Note: Marking is “FS-”.
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