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參數(shù)資料
| 型號： | 2SC5890 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon NPN Epitaxial UHF / VHF wide band amplifier |
| 中文描述： | npn型硅外延超高頻/甚高頻寬帶放大器 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2SC5890 |
2SC5890
Rev.0, Aug. 2002, page 5 of 14
Scale: 8.0 / div.
S
11
Parameter vs. Frequency
S
21
Parameter vs. Frequency
0
30
–30
–60
–90
–120
–150
180
60
90
120
150
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
(I
C
= 10 mA)
(I
C
= 30 mA)
(I
C
= 50 mA)
.2
.4
.6
1
2
5
–10
–5
–3
–2
–1.5
10
5
3
2
1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
1
1.5
Scale: 0.08 / div.
S
12
Parameter vs. Frequency
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
(I
C
= 10 mA)
(I
C
= 30 mA)
(I
C
= 50 mA)
0
30
–30
–60
–90
–120
–150
180
60
90
120
150
4
–4
3 4
.8
S
22
Parameter vs. Frequency
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
(I
C
= 10 mA)
(I
C
= 30 mA)
(I
C
= 50 mA)
.2
.4
.6
1
2
5
–10
–5
–3
–2
–1.5
10
5
3
2
1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
1
1.5
4
–4
3 4
.8
Condition: V
CE
= 3 V, Z
O
= 50
100 to 2000 MHz (100 MHz Step)
(I
C
= 10 mA)
(I
C
= 30 mA)
(I
C
= 50 mA)
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