參數(shù)資料
型號: 2SB1001
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進(jìn)步黨
文件頁數(shù): 3/6頁
文件大?。?/td> 32K
代理商: 2SB1001
2SB1001
3
0
50
100
150
Ambient Temperature Ta (
°
C)
C
(
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Typical Output Characteristics (1)
Collector to Emitter Voltage V
CE
(V)
C
C
0
–2
–10
–4
–6
–8
–100
–80
–60
–40
–20
I
B
= 0
–0.05 mA
–0.1
–0.2
–0.3
–0.15
–0.25
–035
Typical Output Characteristics (2)
–2.0
–1.6
–1.2
–0.8
–0.4
Collector to Emitter Voltage V
CE
(V)
0
–0.4
–0.8
–1.2
–1.6
–2.0
C
C
I
B
= 0
–5 mA
–20
–25
–15
–10
Typical Transfer Characteristics
C
C
–1
–3
–10
–30
–100
–300
–1,000
Base to Emitter Voltage V
BE
(V)
0
–0.2
–0.4
–0.6
–0.8
–1.0
V
= –2 V
Pulse
Ta = 75
°
C
25
–25
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1001BH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SB1001BJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SB1001BJTR-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB1002 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB1002CH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243