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參數(shù)資料
| 型號： | 2SB1001 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SB1001 |
2SB1001
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
–20
V
Collector to emitter voltage
–16
V
Emitter to base voltage
–6
V
Collector current
–2
A
Collector peak current
–3
A
Collector power dissipation
1
W
Junction temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–20
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–16
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
—
—
–0.1
μ
A
μ
A
V
CB
= –16 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –2 V,
I
C
= –0.1 A (Pulse test)
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
V
CE
= –2 V,
I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Emitter cutoff current
—
—
–0.1
DC current transfer ratio
100
—
320
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.15
–0.3
V
Base to emitter saturation
voltage
V
BE(sat)
—
–1.0
–1.2
V
Gain bandwidth product
f
T
—
150
—
MHz
Collector output capacitance
Cob
—
50
—
pF
Note:
Mark
1. The 2SB1001 is grouped by h
FE
as follows.
BH
BJ
h
FE
100 to 200
160 to 320
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1002 | Silicon PNP Epitaxial |
| 2SB1012(K) | Silicon PNP Epitaxial |
| 2SB1025 | Silicon PNP Epitaxial |
| 2SB1026 | Silicon PNP Epitaxial |
| 2SB1027 | Silicon PNP Epitaxial |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1001BH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1001BJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1001BJTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002CH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
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