
E
6.6
28F160S3/28F320S3
47
PRELIMINARY
AC Characteristics
—Write Operations
(1, 5, 6)
T
A
 = 
–40 
o
C to +85 
o
C (Extended) and T
A
 = 0 °C to +70 °C (Commercial)
Versions
(5)
3.3 V ± 0.3 V,
2.7 V–3.6 V V
CC
Valid for All
Speeds
#
Sym
Parameter
Notes
Min
Max
Unit
W1
t
PHWL 
(t
PHEL
)
RP# High Recovery to WE# (CE
X
#) Going Low
2
1
μs
W2
t
ELWL
CE
X
# Setup to WE# Going Low
10
ns
(t
WLEL
)
(WE# Setup to CE
X
# Going Low)
0
ns
W3
t
WLWH
WE# Pulse Width
50
ns
(t
ELEH
)
(CE
X
# Pulse Width)
70
ns
W4
t
DVWH 
(t
DVEH
)
Data Setup to WE# (CE
X
# ) Going High
3
50
ns
W5
t
AVWH 
(t
AVEH
)
Address Setup to WE# (CE
X
# ) Going High
3
50
ns
W6
t
WHEH
CE
X
# Hold from WE# High
10
ns
(t
EHWH
)
(WE# Hold from CE
X
# High)
0
ns
W7
t
WHDX 
(t
EHDX
)
Data Hold from WE# (CE
X
# ) High
5
ns
W8
t
WHAX 
(t
EHAX
)
Address Hold from WE# (CE
X
# ) High
5
ns
W9
t
WHWL
WE# Pulse Width High
30
ns
(t
EHEL
)
(CE
X
# Pulse Width High)
25
ns
W10
t
SHWH 
(t
SHEH
)
WP# V
IH
 Setup to WE# (CE
X
# ) Going High
100
ns
W11
t
VPWH 
(t
VPEH
)
V
PP
 Setup to WE# (CE
X
# ) Going High
2
100
ns
W12
t
WHGL 
(t
EHGL
)
Write Recovery before Read
0
ns
W13
t
WHRL 
(t
EHRL
)
WE# High to STS in RY/BY#  Low
100
ns
W14
t
QVSL
WP# V
IH
 Hold from Valid SRD
2,4
0
ns
W15
t
QVVL
V
PP
 Hold from Valid SRD, STS in RY/BY# High
2,4
0
ns
NOTES:
1. 
Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics
—Read-Only Operations
.
Sampled, not 100% tested.
Refer to Table 3 for valid A
IN
 and D
IN
 for block erase, program, or lock-bit configuration.
V
PP
 should be at V
PPH1/2/3
 until determination of block erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0).
See 
Ordering Information
 for device speeds (valid operational combinations).
See Figures 14 through 16 for testing characteristics.
2. 
3. 
4. 
5. 
6.