參數(shù)資料
型號(hào)： 28F160S3
廠商： Intel Corp.
英文描述： 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
中文描述： 3伏FlashFile內(nèi)存（3伏FlashFile存儲(chǔ)器）
文件頁數(shù)： 42/53頁
文件大小： 331K
代理商： 28F160S3
28F160S3/28F320S3
E
42
PRELIMINARY
6.4
DC Characteristics
(Continued)
T
A
=
–40 °C to +85 °C (Extended) and T
A
= 0 °C to +70 °C (Commercial)
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
Sym
Parameter
Notes
Min
Max
Unit
Conditions
V
IL
Input Low Voltage
8
-0.5
0.8
V
V
IH
Input High Voltage
8
2.0
V
CC
+0.5
V
V
OL
Output Low Voltage
3,8
0.4
V
V
CC
= V
CC1/2
Min
I
OL
= 5.8 mA
V
OH1
Output High Voltage (TTL)
3,8
2.4
V
V
CC
= V
CC1/2
Min
I
OH
=
–2.5 mA
V
OH2
Output High Voltage (CMOS)
3,8
0.85
×
V
CC
V
V
CC
= V
CC1/2
Min
I
OH
= –2.5 mA
V
CC
–
0.4
V
V
CC
= V
CC1/2
Min
I
OH
= –100 μA
V
PPLK
V
PP
Lockout Voltage
4,8
1.5
V
V
PPH1
V
PP
Voltage
4,5
2.7
3.6
V
V
PPH2
V
PP
Voltage
4,5
3.0
3.6
V
V
PPH3
V
PP
Voltage
4,5
4.5
5.5
V
V
LKO
V
CC
Lockout Voltage
9
2.0
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
voltage and T
A
= +25
°
C. These currents are
valid for all product versions (packages and speeds).
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or programmed while in erase suspend mode, the
device’s current is the sum of I
CCWS
or I
CCES
and I
CCR
or I
CCW
.
3. Includes STS in level RY/BY# mode.
4. Refer to Figure 13.
5. Refer to
AC Characteristics
—Read-Only Operations
. If V
CC
is in the range from 2.7 V to 3.6 V (V
CC1
) then V
PP
must be is in
the range from 2.7 V to 3.6 V (V
PPH1
) or 4.5 V to 5.5 V (V
PPH3
). If V
CC
is in the range from 3.0 V to 3.6 V (V
CC2
) then V
PP
must be is in the range from
3.0 V to 3.6 V (V
PPH2
) or 4.5 V to 5.5 V (V
PPH3
).
6. Automatic Power Savings (APS) reduces typical I
CCR
to 3 mA at 2.7 V and 3.3 V V
CC
static operation.
7. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
IL
or V
IH
.
8. Sampled, not 100% tested.
9.
With V
CC
≤
V
LKO
flash memory writes are inhibited.
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