參數(shù)資料
型號(hào)： 28F1604C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述： 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 41/64頁(yè)
文件大?。?/td> 927K
代理商： 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
35
6.3
Noise Reduction
Stacked-CSP memory’s power switching characteristics require careful device decoupling. System
designers should consider three supply current issues for both the flash and SRAM:
1.
Standby current levels (I
CCS
)
2.
Read current levels (I
CCR
)
3.
Transient peaks produced by falling and rising edges of F-CE#, S-CS
1
#, and S-CS
2
.
Transient current magnitudes depend on the device outputs’ capacitive and inductive loading.
Two-line control and proper decoupling capacitor selection will suppress these transient voltage
peaks. Each device should have a capacitors between individual power (F-V
CC
, F-V
CCQ,
F-V
PP,
S-
V
CC
)and ground (GND) signals. High-frequency, inherently low-inductance capacitors should be
placed as close as possible to the package leads.
Noise issues within a system can cause devices to operate erratically if it is not adequately filtered.
In order to avoid any noise interaction issues within a system, it is recommended that the design
contain the appropriate number of decoupling capacitors in the system. Noise issues can also be
reduced if leads to the device are kept very short, in order to reduce inductance.
Decoupling capacitors between V
CC
and V
SS
reduce voltage spikes by supplying the extra current
needed during switching. Placing these capacitors as close to the device as possible reduces line
inductance. The capacitors should be low inductance capacitors; surface mount capacitors typically
exhibit lower inductance.
It is highly recommended that systems use a 0.1
μ
f capacitor for each of the D9, D10, A10 and E4
grid ballout locations (see
Figure 1
for ballout). These capacitors are necessary to avoid undesired
conditions created by excess noise. Smaller capacitors can be used to decouple higher frequencies.
相關(guān)PDF資料
PDF描述
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
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28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160BJHE-BTLTH 制造商: 功能描述: 制造商:undefined 功能描述:
28F160C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
28F160C3BA90 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述:
28F160C3TD70 制造商: 功能描述: 制造商:undefined 功能描述:
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