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參數(shù)資料
| 型號： | 28F1604C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 22/64頁 |
| 文件大?。?/td> | 927K |
| 代理商： | 28F1604C3 |
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28F1602C3, 28F1604C3, 28F3204C3
16
Preliminary
Any attempt to address Protection Program commands outside the defined protection register
address space will result in a status register error (program error bit SR.4 will be set to 1).
Attempting to program or to a previously locked protection register segment will result in a status
register error (program error bit SR.4 and lock error bit SR.1 will be set to 1).
3.8.3
Locking the Protection Register
The user-programmable segment of the protection register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is programmed to 0 at the Intel factory to protect the
unique device number. This bit is set using the Protection Program command to program FFFDH
to the PR-LOCK location. After these bits have been programmed, no further changes can be made
to the values stored in the protection register. A Protection Program command to locked words will
result in a status register error (program error bit SR.4 and Lock Error bit SR.1 will be set to 1).
The protection register lockout state is not reversible.
0645_05
3.9
Additional Flash Features
Intel 3 Volt Advanced+ Stacked-CSP products provide in-system programming and erase in the
1.65 V–3.3 V range. For fast production programming, it also includes a low-cost, backward-
compatible 12 V programming feature.
3.9.1
Improved 12 Volt Production Programming
When F-V
PP
is between 1.65 V and 3.3 V, all program and erase current is drawn through the
F-V
CC
signal. Note that if F-V
PP
is driven by a logic signal, V
IH
min = 1.65 V. That is, F-V
PP
must
remain above 1.65 V to perform in-system flash modifications. When F-V
PP
is connected to a 12 V
power supply, the device draws program and erase current directly from the F-V
PP
signal. This
eliminates the need for an external switching transistor to control the voltage F-V
PP
.
Figure 12,
“Example Power Supply Configurations” on page 34
shows examples of how the flash power
supplies can be configured for various usage models.
Figure 3. Protection Register Memory Map
4 Words
Factory Programmed
4 Words
User Programmed
PR-LOCK
88H
85H
84H
81H
80H
相關(guān)PDF資料 |
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| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導塊閃速存儲器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導塊閃速存儲器) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160BJHE-BTLTH | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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