參數(shù)資料
型號(hào)： 16F872
廠商： Microchip Technology Inc.
英文描述： CAT 5E CROSSOVER PATCH CORD CABLE GREEN 10 FT
中文描述： 28引腳，8位閃存微控制器的CMOS
文件頁數(shù)： 127/160頁
文件大?。?/td> 2600K
代理商： 16F872
1999 Microchip Technology Inc.
Preliminary
DS30221A-page 127
PIC16F872
14.1
DC Characteristics:
PIC16F872 (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
Min
Typ Max Units
≤
T
A
≤
+85°C for industrial
Conditions
Param
No.
D001
D001A
Characteristic
Sym
Supply Voltage
V
DD
4.0
4.5
V
BOR
*
-
-
-
-
5.5
5.5
5.5
-
V
V
V
V
XT, RC and LP osc configuration
HS osc configuration
BOR enabled, Fmax = 14MHz (Note 7)
D002*
RAM Data Retention
Voltage (Note 1)
V
DD
start voltage to
ensure internal Power-on
Reset signal
V
DD
rise rate to ensure
internal Power-on Reset
signal
Brown-out Reset Voltage
Supply Current (Note 2,5) I
DD
V
DR
1.5
D003
V
POR
-
V
SS
-
V
See section on Power-on Reset for details
D004*
SV
DD
0.05
-
-
V/ms See section on Power-on Reset for details
D005
D010
V
BOR
3.7
-
4.0
1.6
4.35
4
V
BODEN bit in configuration word enabled
XT, RC osc configuration
F
OSC
= 4 MHz, V
DD
= 5.5V (Note 4)
D013
-
7
15
mA
mA
HS osc configuration
F
OSC
= 20 MHz, V
DD
= 5.5V
BOR enabled V
DD
= 5.0V
D015*
Brown-out Reset Current
(Note 6)
Power-down Current
(Note 3,5)
I
BOR
-
85
200
μ
A
D020
D021
D021A
D023*
I
PD
-
-
-
-
10.5
1.5
1.5
85
42
16
19
200
μ
A
μ
A
μ
A
μ
A
V
DD
= 4.0V, WDT enabled, -40
°
C to +85
°
C
V
DD
= 4.0V, WDT disabled, -0
°
C to +70
°
C
V
DD
= 4.0V, WDT disabled, -40
°
C to +85
°
C
BOR enabled V
DD
= 5.0V
Brown-out Reset Current
(Note 6)
Legend: * These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note1:
This is the limit to which V
DD
can be lowered without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
MCLR = V
DD
; WDT enabled/disabled as specified.
3:
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
4:
For RC osc configuration, current through R
EXT
is not included. The current through the resistor can be esti-
mated by the formula Ir = V
DD
/2R
EXT
(mA) with R
EXT
in kOhm.
5:
Timer1 oscillator (when enabled) adds approximately 20
μ
A to the specification. This value is from character-
ization and is for design guidance only. This is not tested.
6:
The
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base I
DD
or I
PD
measurement.
7:
When BOR is enabled, the device will operate correctly until the V
BOR
voltage trip point is reached.
I
BOR
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