參數(shù)資料
型號(hào): μPD4811650
廠商: NEC Corp.
英文描述: 16M Synchronous Graphics Memory (SGRAM)(16M同步圖形存儲(chǔ)器)
中文描述: 1,600同步圖形存儲(chǔ)器(SGRAM)(1,600同步圖形存儲(chǔ)器)
文件頁數(shù): 24/96頁
文件大?。?/td> 1517K
代理商: ΜPD4811650
24
Preliminary Data Sheet
μ
PD4811650 for Rev. E
Remark
H = High level, L = Low level, x = High or Low level (Don’t care),
BA = Bank address (A10)
State abbreviations
I = Idle
A = Bank active
R = Read with No precharge (No precharge is posted)
W = Write with No precharge (No precharge is posted)
RP = Read with auto precharge (Precharge is posted)
WP = Write with auto precharge (Precharge is posted)
Any = Any State
X0Y1 = Bank0 is in state “X”, Bank1 = in state “Y”
(X/Y)0Z1 = Z1(X/Y)0 = Bank0 is in state “X” or “Y”, Bank1 is in state “Z”
5. Initialization
The synchronous GRAM is initialized in the power-on sequence according to the following.
(1) Apply power and start clock. Attempt to maintain CKE = “H”, DQM = “H”, and NOP or DESL condition at the
inputs.
(2) Maintain stable power, stable clock, CKE = “H”, DQM = “H”, and NOP or DESL condition for a minimum of 100
μ
s.
(3) Issue precharge commands for all banks of the device.
(4) Issue a mode register set command to initialize the mode register.
(5) Issue two or more auto refresh commands.
The device is now in the IDLE state and is ready for normal operation.
Remarks 1.
The sequence of Mode register programming and Refresh above may be transposed.
2.
The data bus is guaranteed to be high impedance after waiting a minimum of 100
μ
s (Refer to step
(2)
above). It is recommended to maintain CKE and DQM high until the Precharge command is issued.
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