參數(shù)資料
型號(hào): μPD43256B
廠商: NEC Corp.
英文描述: 256K-Bit CMOS Static RAM(256K CMOS 靜態(tài)存儲(chǔ)器)
中文描述: 256K位CMOS靜態(tài)RAM(256K的CMOS靜態(tài)存儲(chǔ)器)
文件頁(yè)數(shù): 10/24頁(yè)
文件大?。?/td> 174K
代理商: ΜPD43256B
10
μ
PD43256B
Read Cycle (1/2)
V
CC
4.5 V
μ
PD43256B-85
μ
PD43256B-A85/A10/A12
μ
PD43256B-B10/B12/B15
Parameter
Symbol
μ
PD43256B-70
Unit
Condition
MIN.
MAX.
MIN.
MAX.
Read cycle time
t
RC
70
85
ns
Address access time
t
AA
70
85
ns
Note 1
CS access time
t
ACS
70
85
ns
OE access time
t
OE
35
40
ns
Output hold from address change
t
OH
10
10
ns
CS to output in low impedance
t
CLZ
10
10
ns
Note 2
OE to output in low impedance
t
OLZ
5
5
ns
CS to output in high impedance
t
CHZ
30
30
ns
OE to output in high impedance
t
OHZ
30
30
ns
Notes 1.
See the output load shown in
Figure 1
except for
μ
PD43256B-A, 43256B-B.
2.
See the output load shown in
Figure 2
except for
μ
PD43256B-A, 43256B-B.
Remark
These AC characteristics are in common regardless of package types and L, LL versions.
Read Cycle (2/2)
V
CC
3.0 V
V
CC
2.7 V
Parameter
Symbol
μ
PD43256B-A85
μ
PD43256B-A10
μ
PD43256B-A12
μ
PD43256B-B10
μ
PD43256B-B12
μ
PD43256B-B15
Unit
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read cycle time
t
RC
85
100
120
100
120
150
ns
Address access time
t
AA
85
100
120
100
120
150 ns
Note
CS access time
t
ACS
85
100
120
100
120
150 ns
OE access time
t
OE
50
60
60
60
60
70
ns
Output hold from address change
t
OH
10
10
10
10
10
10
ns
CS to output in low impedance
t
CLZ
10
10
10
10
10
10
ns
OE to output in low impedance
t
OLZ
5
5
5
5
5
5
ns
CS to output in high impedance
t
CHZ
35
35
40
35
40
50
ns
OE to output in high impedance
t
OHZ
35
35
40
35
40
50
ns
Note
Loading condition is 1TTL + 100 pF.
Remark
These AC characteristics are in common regardless of package types and L, LL versions.
Con-
dition
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