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參數(shù)資料
| 型號： | μPD4265405 |
| 廠商： | NEC Corp. |
| 英文描述： | 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 動態(tài)RAM) |
| 中文描述： | 16,777,216詞由4位的CMOS動態(tài)存儲器（RAM的6400動態(tài)） |
| 文件頁數(shù)： | 8/36頁 |
| 文件大?。?/td> | 256K |
| 代理商： | ΜPD4265405 |
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μ
PD4264405, 42S65405, 4265405
8
Electrical Specifications
All voltages are referenced to GND.
After power up (V
CC
≥
V
CC(MIN.)
), wait more than 100
μ
s (RAS, CAS inactive) and then, execute eight CAS before
RAS or RAS only refresh cycles as dummy cycles to initialize internal circuit.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on any pin relative to GND
V
T
–0.5 to +4.6
V
Supply voltage
V
CC
–0.5 to +4.6
V
Output current
I
O
50
mA
Power dissipation
P
D
1
W
Operating ambient temperature
T
A
0 to +70
C
Storage temperature
T
stg
–55 to +125
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+ 0.3
V
Low level input voltage
V
IL
–0.3
+0.8
V
Operating ambient temperature
T
A
0
70
C
Capacitance (T
A
= 25 C, f = 1 MH
Z
)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
Address
5
pF
C
I2
RAS, CAS, WE, OE
7
Data input/output capacitance
C
I/O
I/O
7
pF
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