參數資料
型號: μPD4265405
廠商: NEC Corp.
英文描述: 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 動態(tài)RAM)
中文描述: 16,777,216詞由4位的CMOS動態(tài)存儲器(RAM的6400動態(tài))
文件頁數: 1/36頁
文件大小: 256K
代理商: ΜPD4265405
1995
DATA SHEET
MOS INTEGRATED CIRCUIT
64 M-BIT DYNAMIC RAM
16 M-WORD BY 4-BIT, EDO
Description
The
μ
PD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO.
EDO is a kind of the page mode and is useful for the read operation.
Besides, the
μ
PD42S65405 can execute CAS before RAS self refresh.
These are packaged in 32-pin plastic TSOP (II) and 32-pin plastic SOJ.
Features
EDO (Hyper page mode)
16,777,216 words by 4 bits organization
Single +3.3 V
±
0.3 V power supply
Fast access and cycle time
The information in this document is subject to change without notice.
Document No. M10856EJ6V0DS00 (6th edition)
Date Published September 1997 N
Printed in Japan
μ
PD4264405, 42S65405, 4265405
Part number
Power consumption
Active (MAX.)
Access time
(MAX.)
R/W cycle time
(MIN.)
EDO (Hyper page mode)
cycle time (MIN.)
μ
PD4264405-A50
360 mW
50 ns
84 ns
20 ns
μ
PD42S65405-A50, 4265405-A50
468 mW
μ
PD4264405-A60
324 mW
60 ns
104 ns
25 ns
μ
PD42S65405-A60, 4265405-A60
396 mW
The
μ
PD42S65405 can execute CAS before RAS self refresh.
Part number
Refrech cycle
Refresh
Power consumption
at standby (MAX.)
μ
PD42S65405
4,096 cycles/128 ms
RAS only refresh, Normal read/write,
CAS before RAS self refresh,
CAS before RAS refresh, Hidden refresh
μ
PD4264405
8,192 cycles/64 ms
RAS only refresh, Normal read/write
1.8 mW
4,096 cycles/64 ms
CAS before RAS refresh, Hidden refresh
(CMOS level input)
μ
PD4265405
4,096 cycles/64 ms
RAS only refresh, Normal read/write,
CAS before RAS refresh, Hidden refresh
The mark
shows major revised points.
0.72 mW
(CMOS level input)
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