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參數(shù)資料
| 型號(hào)： | μPD4265805 |
| 廠商： | NEC Corp. |
| 英文描述： | 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動(dòng)態(tài)RAM) |
| 中文描述： | 8388608字8位的CMOS（6400動(dòng)態(tài)RAM動(dòng)態(tài)存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/36頁(yè) |
| 文件大小： | 226K |
| 代理商： | ΜPD4265805 |
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1995
DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD4264805, 42S65805, 4265805
64 M-BIT DYNAMIC RAM
8 M-WORD BY 8-BIT, EDO
The information in this document is subject to change without notice.
The mark
shows major revised points.
Document No. M10857EJ6V0DS00 (6th edition)
Date Published September 1997 N
Printed in Japan
Description
The
μ
PD4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO.
EDO is a kind of the page mode and is useful for the read operation.
Besides, the
μ
PD42S65805 can execute CAS before RAS self refresh.
These are packaged in 32-pin plastic TSOP (II) and 32-pin plastic SOJ.
Features
EDO (Hyper page mode)
8,388,608 words by 8 bits organization
Single +3.3 V
±
0.3 V power supply
Fast access and cycle time
Part number
Power consumption
Active (MAX.)
Access time
(MAX.)
R/W cycle time
(MIN.)
EDO (Hyper page mode)
cycle time (MIN.)
μ
PD4264805-A50
378 mW
50 ns
84 ns
20 ns
μ
PD42S65805-A50, 4265805-A50
486 mW
μ
PD4264805-A60
342 mW
60 ns
104 ns
25 ns
μ
PD42S65805-A60, 4265805-A60
414 mW
The
μ
PD42S65805 can execute CAS before RAS self refresh.
Part number
Refresh cycle
Refresh
Power consumption
at standby (MAX.)
μ
PD42S65805
4,096 cycles/128 ms
RAS only refresh, Normal read/write,
CAS before RAS self refresh,
CAS before RAS refresh, Hidden refresh
0.72 mW
(CMOS level input)
μ
PD4264805
8,192 cycles/64 ms
RAS only refresh, Normal read/write
1.8 mW
4,096 cycles/64 ms
CAS before RAS refresh, Hidden refresh
(CMOS level input)
μ
PD4265805
4,096 cycles/64 ms
RAS only refresh, Normal read/write,
CAS before RAS refresh, Hidden refresh
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