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參數資料
| 型號： | X76F641XG-2.0 |
| 廠商： | IC MICROSYSTEMS Sdn. Bhd. |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統一部門，串行閃存 |
| 文件頁數： | 11/17頁 |
| 文件大?。?/td> | 167K |
| 代理商： | X76F641XG-2.0 |
X76F641
11
EQUIVALENT A.C. LOAD CIRCUIT
A.C. TEST CONDITIONS
7002 FM T09
3V
1.3K
Ο
OUTPUT
100pF
5V
1533
Ο
OUTPUT
100pF
7025 FM 17
Input Pulse Levels
V
CC
x 0.1 to V
CC
x 0.9
Input Rise and Fall Times
10ns
Input and Output Timing Level
V
CC
x 0.5
Output Load
100pF
D.C. OPERATING CHARACTERISTICS
(Over the recommended operating conditions unless otherwise specified.)
7002 FM T07
CAPACITANCE
T
A
= +25°C, f = 1MHz, V
CC
= 5V
7002 FM T08
NOTES:
(1) Must perform a stop command after a read command prior to measurement
(2) V
IL
min. and V
IH
max. are for reference only and are not tested.
(3) This parameter is periodically sampled and not 100% tested.
Symbol
Parameter
Limits
Units
Test Conditions
Min.
Max.
I
CC1
V
CC
Supply Current
(Read)
1
mA
f
SCL
= V
CC
x 0.1/V
CC
x 0.9 Levels @ 400 KHz, SDA =
Open
RST = V
SS
I
CC2
(3)
V
CC
Supply Current
(Write)
3
mA
f
SCL
= V
CC
x 0.1/V
CC
x 0.9 Levels @ 400 KHz, SDA =
Open
RST = V
SS
I
SB1
(1)
V
CC
Supply Current
(Standby)
50
μA
V
IL
= V
CC
x 0.1, V
IH
= V
CC
x 0.9 f
SCL
= 400 KHz, f
SDA
= 400 KHz
I
SB2
(1)
V
CC
Supply Current
(Standby)
1
μA
V
SDA
= V
SCC
= V
CC
Other =
GND or V
CC
–0.3V
I
LI
Input Leakage Current
10
μA
V
IN
= V
SS
to V
CC
I
LO
Output Leakage Current
10
μA
V
OUT
= V
SS
to V
CC
V
IL1
(2)
Input LOW Voltage
–0.5
V
CC
x 0.3
V
V
CC
= 5.5V
V
IH1
(2)
Input HIGH Voltage
V
CC
x 0.7V
CC
+ 0.5
V
V
CC
= 5.5V
V
IL2
(2)
Input LOW Voltage
–0.5
V
CC
x 0.1
V
V
CC
= 2.0V
V
IH2
(2)
Input HIGH Voltage
V
CC
x 0.9V
CC
+ 0.5
V
V
CC
= 2.0V
V
OL
Output LOW Voltage
0.4
V
I
OL
= 3mA
Symbol
C
OUT
(3)
Test
Max.
Units
Conditions
Output Capacitance (SDA)
8
pF
V
I/O
= 0V
C
IN
(3)
Input Capacitance (RST, SCL)
6
pF
V
IN
= 0V
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