參數(shù)資料
型號(hào): WV3HG32M72EEU665D4MG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi): DRAM
英文描述: 32M X 72 DDR DRAM MODULE, 0.45 ns, ZMA200
封裝: ROHS COMPLIANT, SODIMM-200
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 173K
代理商: WV3HG32M72EEU665D4MG
WV3HG32M72EEU-D4
January 2006
Rev. 0
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
ABSOLUTE MAXIMUM DC CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
VCC
Voltage on VCC pin relative to VSS
-1.0
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage Temperature
-55
100
°C
TCASE
DDR2 SDRAM Device Operating Temperature*
0
85
°C
TOPR
Operating Temperature (Ambient)
-45
45
°C
II
Input Leakage Current; Any input 0V ≤ VIN ≤ VCC;
VREF input 0V ≤ VIN ≤0.95V; (All other pins not under
test = 0V)
Command/Address,
RAS#, CAS#, WE# CS#,
CKE
-45
45
A
CK, CK#
-10
10
DM
-5
5
IOZ
Output Leakage Current; 0V ≤ VOUT ≤ VCC; DQs and
ODT are disabled
DQ, DQS, DQS#
-5
5
A
IVREF
VREF Leakage Current; VREF = Valid VREF level
-18
18
A
* TCASE species as the temperature at the top center of the memory devices.
RECOMMENDED DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typ
Max
Units
Notes
Supply Voltage
VCC
1.7
1.8
1.9
V
1
I/O Reference Voltage
VREF
0.49 x VCC
0.51 x VCC
V1
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF
VREF + 0.04
mV
2
NOTE:
1. VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±1
percent of the DC value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF (DC). This measurement is to be taken at the nearest VREF bypass capacitor.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF and must track variations in the DC level of VREF.
INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 1MHz, V = 1.8V
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12, BA0~BA1, RAS#, CAS#, WE#)
CIN1
13
22
pF
Input Capacitance (CKE0), (ODT0)
CIN2
13
22
pF
Input Capacitance (CS0#)
CIN3
13
22
pF
Input Capacitance (CK, CK#)
CIN4
67
pF
Input Capacitance (DQS0~DQS8)
CIN5 (E6)
6.5
7.5
pF
CIN5 (D5)
6.5
8
pF
Input Capacitance (DQ0~DQ63), (CB0~CB7)
COUT (E6)
6.5
7.5
pF
COUT (D5)
6.5
8
pF
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