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參數(shù)資料
| 型號： | W946432AD-6 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 2M X 32 DDR DRAM, 0.1 ns, PQFP100 |
| 文件頁數(shù)： | 19/39頁 |
| 文件大?。?/td> | 577K |
| 代理商： | W946432AD-6 |
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W946432AD
PRELIMINARY DATE: 11/13/01
26
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Figure16:WRITE TO READ – DQSS, NON – INTERRUPTING
WRITE
NOP
READ
NOP
Bank,
Col b
DI
b
DQ
DM
DQS
ADDRESS
COMMAND
CK
DON'T CARE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
tDQSS
NOP
Bank,
Col n
T10
T11
tWTR
CL=3
WRITE TO READ - DQSS, NON - INTERRUPTING
DI b, etc. = Data In for column b, etc.
A non-interrupted burst of 4 is shown
tWTR is referenced from the first postive CK edge after the last Data In pair
A8 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ andWRITE commands may be to any bank, and may be to the same or different devices
In the case where the READ and WRITE commands are to different devices, tWTR need not be met,
and the READ command can be applied earlier
tWTR = 2 tCK for optional CL = 1.5 (otherwise tWTR = 1 Tck)
Figure17:WRITE TO PRECHARGE - DQSS, NON - INTERRUPTING
WRITE
NOP
PRE
NOP
Bank a,
Col b
DI
b
DQ
DM
DQS
ADDRESS
COMMAND
CK
DON'T CARE
WRITE TO PRECHARGE - DQSS, NON-INTERRUPTING
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
tDQSS
NOP
Bank
(a or all)
T10
T11
tWR
tRP
DI b, etc. = Data In for column b, etc.
A non-interrupted burst of 4 is shown
tWTR is referenced from the first postive CK edge after the last Data In pair
A8 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9464G6IB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M × 4 BANKS × 16 BITS DDR SDRAM |
| W9464G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ?? 4 BANKS ?? 16 BITS DDR SDRAM |
| W9464G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9464G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
| W9464G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:64MBIT DDRI 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
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