參數(shù)資料
型號(hào)： W78M32VP110BM
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： PROM
英文描述： 8M X 32 FLASH 3.3V PROM, 110 ns, PBGA159
封裝： 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
文件頁(yè)數(shù)： 21/51頁(yè)
文件大?。?/td> 1637K
代理商： W78M32VP110BM
28
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M32VP-XBX
January 2010
Rev. 12
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 38 ERASE AND PROGRAMMING PERFORMANCE
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming prior to erasure (Note
4)
Chip Erase Time
64
256
sec
Total Write Buffer Time (Note 3)
480
μs
Excludes system level overhead (Note 5)
Total Accelerated Write Buffer Programming Time (Note 3)
432
μs
Ship Program Time
123
sec
Notes
1. Typical program and erase times assume the following conditions: 25C, 3.6V VCC, 10,000 cycles, checker board pattern.
2. Under corst case conditions of -40C, VCC = 3.0V, 100,000 cycle.
3. Effective write buffer specication is based upon 32-word write buffer operation.
4. In the pre-programming step of the embedded erase algorithm, all bits are programmed to 00H before erasure.
5. System0level overhead is the time required to execute the two-or four-bus-cycle sequence for the program command. See table 38 and 39.
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參數(shù)描述
W78M32VP-110BM 制造商:White Electronic Designs 功能描述:Flash Module Parallel 256Mbit
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