參數(shù)資料
型號(hào): W3H32M72E-400SB2M
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 32M X 72 DDR DRAM, 0.6 ns, PBGA208
封裝: 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁(yè)數(shù): 6/30頁(yè)
文件大?。?/td> 0K
代理商: W3H32M72E-400SB2M
W3H32M72E-XSB2X
14
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
November 2009
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
POSTED CAS ADDITIVE LATENCY (AL)
Posted CAS additive latency (AL) is supported to make
the command and data bus efficient for sustainable
bandwidths in DDR2 SDRAM. Bits E3–E5 dene the value
of AL, as shown in Figure 7. Bits E3–E5 allow the user
to program the DDR2 SDRAM with an inverse AL of 0, 1,
2, 3, or 4 clocks. Reserved states should not be used as
unknown operation or incompatibility with future versions
may result.
In this operation, the DDR2 SDRAM allows a READ or
WRITE command to be issued prior to tRCD (MIN) with
the requirement that AL ≤ tRCD (MIN). A typical application
using this feature would set AL = tRCD (MIN) - 1x tCK. The
READ or WRITE command is held for the time of the AL
before it is issued internally to the DDR2 SDRAM device.
RL is controlled by the sum of AL and CL; RL = AL+CL.
Write latency (WL) is equal to RL minus one clock; WL =
AL + CL - 1 x tCK.
A9
A7 A 6 A5 A4 A3
A8
A2
A1 A0
Extended Mo de
Register (Ex)
Address Bus
97
6
5
4
3
8
2
1
0
A10
A12 A11
BA0
BA1
BA2
10
11
12
13
01
14
1
16
5
A13
0
1
0
1
Mode Register Definition
Mo de Register (MR)
Extended Mo de Register (EMR)
Extended Mo de Register (EMR2)
Extended Mo de Register (EMR3)
M 15
0
1
M 14
EMR2
01
01 01
01
High Temperature Self Refresh rate enable
Commer cial-Temperature default
Industrial-Temperature option;
use if T
C exceeds 85°C
E7
0
1
FIGURE 8 – EXTENDED MODE REGISTER 2 (EMR2) DEFINITION
Note: 1. E13 (A13)-E0(A0) are reserved for future use and must be programmed to
"0." A13 is not used in this device.
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參數(shù)描述
W3H32M72E-400SBC 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk
W3H32M72E-400SBI 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 400MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk
W3H32M72E-400SBM 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk
W3H32M72E-533ES 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H32M72E-533ESC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package