參數(shù)資料
型號: W25P012A
廠商: WINBOND ELECTRONICS CORP
英文描述: 32K×32 Burst Pipeline High-Speed CMOS Static RAM(32K×32位同步脈沖管線高速CMOS靜態(tài)RAM)
中文描述: 32K的管道爆裂× 32高速CMOS靜態(tài)RAM(32K的× 32位同步脈沖管線高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 7/16頁
文件大?。?/td> 308K
代理商: W25P012A
W25P012A
Publication Release Date: September 1996
- 7 -
Revision A4
Operating Characteristics, continued
PARAMETER
Standby Current
SYM.
I
SBC
TEST CONDITIONS
Unselected mode defined in
truth table,V
IN
= V
DD
-
0.2V/0.2V
T
CYC
min
ZZ mode, T
CYC
min.
MIN.
-
TYP.
-
MAX.
10
UNIT
mA
ZZ Mode Current
I
ZZ
-
-
1
mA
Note: Typical characteristics are measured at V
DD
= 3.3V, T
A
= 25
°
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
C
IN
C
I/O
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Input Capacitance
Input/Output Capacitance
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 3V
2 nS
1.5V
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
AC Test Loads and Waveform
90%
10%
90%
2 nS
10%
2 nS
RL = 50 ohm
VL = 1.5V
OUTPUT
5 pF
Including
Jig and
Scope
R2
350 ohm
R1 320 ohm
3.3V
OUTPUT
30 pF
Including
Jig and
Scope
3.0V
0V
Zo = 50 ohm
(For T
KHZ,
T
KLZ,
T
OHZ,
T
OLZ,
measurement)
相關(guān)PDF資料
PDF描述
W25P022A 64K×32 Burst Pipeline High-Speed CMOS Static RAM(64K×32位同步脈沖管線高速CMOS靜態(tài)RAM)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25P022A 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
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