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參數(shù)資料
| 型號： | W25P012A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 32K×32 Burst Pipeline High-Speed CMOS Static RAM(32K×32位同步脈沖管線高速CMOS靜態(tài)RAM) |
| 中文描述： | 32K的管道爆裂× 32高速CMOS靜態(tài)RAM（32K的× 32位同步脈沖管線高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 308K |
| 代理商： | W25P012A |
W25P012A
- 6 -
Write Table, continued
READ/WRITE FUNCTION
Write all bytes I/O1
I/O32
Write all bytes I/O1
I/O32
GW
1
0
BWE
0
X
BW4
0
X
BW3
0
X
BW2
0
X
BW1
0
X
The ZZ state is a low-power state in which the device consumes less power than in the Unselected
mode. Enabling the ZZ pin for a fixed period of time will force the SRAM into the ZZ state. Pulling the
ZZ pin low for a set period of time will wake up the SRAM again. While the SRAM is in ZZ mode, data
retention is guaranteed, but the chip will not monitor any input signal except for the ZZ pin. In the
Unselected mode, on the other hand, all the input signals are monitored.
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to 4.6
-0.5 to 4.6
UNIT
V
V
V
W
°
C
°
C
Core Supply Voltage to Vss
I/O Supply Voltage to Vss
Input/Output to Vss Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
V
SSQ
-0.5 to V
DDQ
+0.5
1.0
-65 to 150
0 to +70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
/V
DDQ
= 3.15V to 3.6V, V
SS
/V
SSQ
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage
Current
SYM.
V
IL
V
IH
I
LI
I
LO
TEST CONDITIONS
-
-
V
IN
= V
SSQ
to V
DDQ
V
I/O
= V
SSQ
to V
DDQ,
and data
I/O pins in high-Z state defined
in truth table
I
OL
= +8.0 mA
I
OH
= -4.0 mA
T
CYC
≥
min., I/O = 0 mA
Unselected mode defined in
truth table, V
IN
, V
IO
= V
IH
(min.) /V
IL
(max.) T
CYC
≥
min.
MIN.
-0.5
+2.0
-10
-10
TYP.
-
-
-
-
MAX.
+0.8
V
DD
+0.3
+10
+ 10
UNIT
V
V
μ
A
μ
A
Output Low Voltage
Output High Voltage
Operating Current
Standby Current
V
OL
V
OH
I
DD
I
SBT
-
-
-
-
-
0.4
-
250
80
V
V
2.4
-
-
mA
mA
相關(guān)PDF資料 |
PDF描述 |
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| W25P022A | 64K×32 Burst Pipeline High-Speed CMOS Static RAM(64K×32位同步脈沖管線高速CMOS靜態(tài)RAM) |
| W25P022A-6 | 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P022A-7 | 64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25P022A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P022A-6 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P022A-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P022AD-6 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25P022AD-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 32 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
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