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參數(shù)資料
| 型號(hào)： | VP0610L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | VP0610L |
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
www.vishay.com
2
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T
VP0610L/T
BS250
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source
Drain Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
10 A
70
60
60
V
GS
= 0 V, I
D
=
100 A
45
V
Gate-Threshold
Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
1 mA
1.9
1
2.4
1
3.5
1
3.5
V
DS
= 0 V, V
GS
=
20 V
10
10
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V, T
J
= 125 C
50
nA
V
DS
= 0 V, V
GS
=
15 V
20
V
DS
=
48 V, V
GS
= 0 V
1
1
Zero Gate Voltage
Drain Current
I
DSS
V
DS
=
48 V, V
GS
= 0 V, T
J
= 125 C
200
200
A
V
DS
=
25 V, V
GS
= 0 V
0.5
O S
On-State Drain
Current
b
V
DS
=
10 V, V
GS
=
4.5 V
180
50
I
D(on)
= 10 V V
= 10 V
V
DS
10 V, V
GS
L Suffix
750
600
mA
T Suffix
220
V
GS
=
4.5 V, I
D
=
25 mA
11
25
Drain-Source
On-Resistance
b
r
DS(on)
V
GS
=
10 V, I
D
=
0.5 A
L Suffix
8
10
10
V
GS
=
10 V, I
D
=
0.5 A, T
J
= 125 C
L Suffix
15
20
20
V
GS
=
10 V, I
D
=
0.2 A
T Suffix
6.5
10
10
14
Forward
Transconductance
b
g
fs
V
DS
=
10 V, I
D
=
0.5 A
L Suffix
20
80
mS
V
DS
=
10 V, I
D
=
0.1 A
T Suffix
90
60
70
Diode Forward
Voltage
V
SD
I
S
=
0.5 A, V
GS
= 0 V
1.1
V
Dynamic
Input Capacitance
C
iss
15
60
60
Output Capacitance
C
oss
V
DS
=
25 V, V
GS
= 0 V
f = 1 MHz
10
25
25
pF
Reverse Transfer
Capacitance
C
rss
3
5
5
Switching
c
Turn-On Time
t
ON
V
= 25 V, R
L
= 133
0.18 A, V
GEN
=
10 V, R
g
= 25
8
10
ns
Turn-Off Time
t
OFF
I
D
8
10
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDS06
2%.
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PDF描述 |
|---|---|
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| VP0645N2 | TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | TO-39 |
| VP0650N5 | TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP0610L-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 60V 0.18A 3-Pin TO-226AA T/R |
| VP0610T | 功能描述:MOSFET 60V 0.12A 0.36W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0610T-T1 | 制造商:Vishay Siliconix 功能描述: |
| VP0645 | 制造商:SUPERTEX 制造商全稱(chēng):SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP0645N2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | TO-39 |
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