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參數(shù)資料
| 型號： | VP0645 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強模式垂直的DMOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 72K |
| 代理商： | VP0645 |
7-245
9
7
VP0645
VP0650
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Order Number / Package
BV
DSS
/
BV
DGS
-450V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-39
TO-92
TO-220
Die
30
-0.2A
VP0645N2
—
—
VP0645ND
-500V
30
-0.2A
—
VP0650N3
VP0650N5
VP0650ND
MIL visual screening available
TO-220
TAB: DRAIN
TO-39
TO-92
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Applications
■
■
Motor controls
■
■
Converters
■
■
Amplifiers
■
■
Switches
■
■
Power supply circuits
■
■
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
■
■
Free from secondary breakdown
■
■
Low power drive requirement
■
■
Ease of paralleling
■
■
Low C
ISS
and fast switching speeds
Excellent thermal stability
■
■
■
■
Integral Source-Drain diode
■
■
High input impedance and high gain
■
■
Complementary N- and P-channel devices
S G D
D G S
Case: DRAIN
G
– OBSOLETE –
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| VP0808L | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-80V，夾斷電流-0.28A的P溝道增強型MOSFET) |
| VP0808 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-80V,5Ω，P溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| VP0808 | P-Channel Enhancement-Mode Vertical DMOS FETs |
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| VP1008 | P-Channel Enhancement-Mode D-MOS POWER FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP0645N2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | TO-39 |
| VP0650 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP0650N3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | TO-92 |
| VP0650N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | TO-220AB |
| VP0808 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel Enhancement-Mode D-MOS POWER FETs |
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