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參數(shù)資料
| 型號(hào)： | VP0610L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | VP0610L |
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
TP0610L
60
10 @ V
GS
=
10 V
10 @ V
GS
=
10 V
10 @ V
GS
=
10 V
10 @ V
GS
=
10 V
14 @ V
GS
=
10 V
1 to
2.4
0.18
TP0610T
60
1 to
2.4
0.12
VP0610L
60
1 to
3.5
0.18
VP0610T
60
1 to
3.5
0.12
BS250
45
1 to
3.5
0.18
FEATURES
High-Side Switching
Low On-Resistance: 8
Low Threshold:
1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
APPLICATIONS
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
TP0610T
VP0610T
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
BS250
TP0610L
VP0610L
Device Marking
Front View
“S” TP
0610L
xxll
“S” VP
0610L
xxll
“S” = Siliconix Logo
xxll
= Date Code
TP0610L
VP0610L
Device Marking
Front View
“S” BS
250
xxll
“S” = Siliconix Logo
xxll
= Date Code
BS250
Marking Code:
TP0610T: TO
wll
VP0610T: VOwll
w
= Week Code
lL
= Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0610L
TP0610T
VP0610L
VP0610T
BS250
Unit
Drain-Source Voltage
V
DS
V
GS
60
60
60
60
45
V
Gate-Source Voltage
30
30
30
30
25
Continuous Drain Current
(T
J
= 150 C)
Pulsed Drain Current
a
T
A
= 25 C
T
A
= 100 C
I
D
0.18
0.12
0.18
0.12
0.18
0.11
0.07
0.11
0.07
A
I
DM
0.8
0.4
0.8
0.4
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
0.8
0.36
0.8
0.36
0.83
W
0.32
0.14
0.32
0.14
Thermal Resistance, Junction-to-Ambient
R
thJA
T
J
, T
stg
156
350
156
350
150
C/W
Operating Junction and Storage Temperature Range
55 to 150
C
Notes
a.
For applications information see AN804.
Pulse width limited by maximum junction temperature.
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PDF描述 |
|---|---|
| VP0610L | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管) |
| VP0645N2 | TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | TO-39 |
| VP0650N5 | TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | TO-220AB |
| VP0650N3 | TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | TO-92 |
| VP0645 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP0610L-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 60V 0.18A 3-Pin TO-226AA T/R |
| VP0610T | 功能描述:MOSFET 60V 0.12A 0.36W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0610T-T1 | 制造商:Vishay Siliconix 功能描述: |
| VP0645 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP0645N2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | TO-39 |
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